Structural and electronic properties of quantum dot surfaces
نویسندگان
چکیده
We report on recent progress in studying the structural, electronic and optical properties of Si and Ge quantum dots, using first principles calculations. We used both ab initio molecular dynamics techniques and quantum monte carlo calculations to unravel the effects of different surface structures and passivations on the properties of Si and Ge dots. Here we discuss the results on the effects of surface structure on the core properties of Ge dots up to 300 atoms and the effects of oxygen and other passivants on the optical properties of Si dots.
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